GaN Power Devices Market is expected to display a CAGR of 24% during the forecast period 2027

The GaN power devices market refers to the market for power devices made using Gallium Nitride (GaN) material. GaN power devices have superior performance compared to traditional Silicon (Si) based power devices, leading to increased adoption in various industries such as automotive, consumer electronics, and renewable energy. The market for GaN power devices is expected to grow due to increasing demand for high-power and high-frequency applications, and improvements in manufacturing technology leading to lower costs. Key players in the GaN power devices market include Efficient Power Conversion (EPC), Navitas Semiconductor, Infineon Technologies, Texas Instruments, and ROHM Semiconductor.

One of the biggest consumer electronics markets in the world is the Japanese market. The need for semiconductors is increasing due to their significant revenue share, and GaN power devices’ compact size, efficiency, and low capacitance reduce energy losses during charging and discharging. This is probably going to boost market demand and ultimately fuel market expansion.

GaN is a material that is frequently used in transistors, and because of its improved characteristics—high thermal conductivity, high voltage potential, and large critical fields, for example—these devices provide high switching frequencies and high power densities, allowing transistors to operate at high voltage levels. This market is expanding due to the numerous industries in which these transistors are used and their high quality.

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Japan GaN power devices market anticipated to register a high CAGR during the period of forecast

In terms of value, the Japan GaN power devices market registered a CAGR of 17.8% from 2012–2016 and is expected to exhibit a CAGR of 23.1% from 2017–2027. In 2017, the Japan GaN power devices market is expected to be valued at more than US$ 100 Mn and is projected to reach more than US$ 800 Mn by the end of 2027. The GaN power devices market in Japan is expected to represent incremental opportunity of a little more than US$ 700 Mn between 2017 and 2027.

The Japan regional market is projected to be the most attractive market in the global GaN power devices market during the forecast period in terms of value. However, in terms of year on year growth, the Latin America GaN power devices market will register high Y-o-Y growth rates throughout the forecast period.

Shrink path of semiconductor power devices is one of the main factors restraining the growth of the GaN power devices market in Japan

One of the factors hampering the growth of the Gallium Nitride power devices market is the shrinking path of semiconductor power devices. With increasing high current density in GaN devices, problems related to existing assembly and interconnect technologies are increasing. The major problems include low impedance interconnects, higher thermal resistance and lower thermal capacitance per chip demanding higher chip temperature and better thermal interconnects.

Market segmentation

By Technology

• 4H-SiC MOSFET
• HEMT
• Others

By Wafer Material

• GaN SiC
• GaN Si

By Wafer Size

• Less than 150mm
• 150mm-500mm
• More than 500 mm

By Industry

• Consumer Electronics
• Energy & Utilities
• Automotive
• IT & Telecom
• Others

By Region

• North America
• Latin America
• Europe
• Asia Pacific
• Middle East & Africa (MEA)

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Table of Content

1. Executive Summary

1.1. Market Overview

1.2. Market Analysis

1.3. FMI Analysis and Recommendations

2. Market Introduction

2.1. Market Taxonomy

2.2. Market Definition

3. Market View Point

3.1. Macro-Economic Factors

3.2. Opportunity Analysis

4. Global Market Analysis 2012–2016 and Forecast 2017–2027

4.1. Market Volume Projections

4.2. Market Size and Y-o-Y Growth

4.3. Absolute $ Opportunity

4.4. Value Chain