Japan GaN Industrial Devices Industry Outlook 2031

Wide bandgap semiconductor technologies, such as Gallium Nitride Field Effect Transistors (GaN FETs), have been gaining traction for power management and conversion in different applications, from high power motor drives to fast charging adaptors, telecommunication, computing, to space applications. These devices feature lower RDS (on) and very low gate charge enabling power management systems to operate at higher switching frequencies, while still achieving higher efficiency and a smaller solution footprint. Gallium Nitride (GaN) is a highly efficient, high-performance wide bandgap semiconductor, and it is among the most promising emerging power technologies.

GaN-based power devices expressively outperform traditional silicon devices with faster switching speeds, higher thermal conductivity, and lower RDS (on). The global market is driven by the growing investments in research & development of GaN power devices and the emergence of GaN-on-Silicon devices for high power applications.

Rise in Use of GaN Industrial Devices in Communication Satellite Equipment

Based on application, the global GaN industrial devices market has been split into RF power amplifiers, microwave & millimeter-wave circuits, radar sensing equipment, tactical radios, communications satellite equipment, motor drivers, wireless infrastructure, and others (inverters, power adapters, etc.). The communications satellite equipment segment held a significant share of 23.59% of the market in 2021. Industrial and manufacturing sectors require continuous and reliable GaN industrial devices to operate at full capacity, which in turn is boosting the demand for GaN technology. The rising adoption and industrial applications with GaN power transistors from several defense forces are boosting the market. The expansion is also due to the growing need for increased bandwidth and performance reality in radio communications, electronic warfare, and radars.

GaN semiconductor device ICs are utilized in radars for efficient navigation and real-time air traffic control. Moreover, GaN ICs can offer higher operating frequencies for radar communication, terrestrial radios, and military jammers. Rising adoption of wideband GaN power transistors from several defense forces is also fuelling the market. Bringing together the gallium nitride semiconductor device and GaN on diamond thin films, the core materials used for satellite communications equipment, synthetic CVD diamond enables kilowatt densities of heat to be extracted more efficiently and effectively than ever before.

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Increase in Need to Enhance Battlefield Performance in Defense Industry to Drive Global Market

Improved responsiveness of various defense equipment, such as radar, satellite, and missiles, to enhance battlefield performance, is considered an important factor for the defense sector. Therefore, a high level of integration is required between radar communication systems and electronic warfare devices that are used in the military. The defense industry requires an extremely high level of long-term reliability for its missions. GaN on Diamond semiconductor substrate offers robust performance in severe environments for multiple applications including avionics systems, satellites, and combat vehicles. GaN semiconductor devices have majorly benefitted the defense industry owing to their high breakdown voltage and rapid heat dissipation capacity. In the military & defense sector, GaN material is primarily utilized in HEMT (High Electron Mobility Transistor), which is essential for high-frequency operations.

Additionally, GaN industrial devices also enable better utilization of various electromagnetic spectrums, thereby improving the performance of military and defense cellular handset, satellite, and wireless technologies. Increasing investments by governments in the aerospace and defense sector boost the demand for the various power electronics components and devices that are used in aerospace and defense equipment. Geopolitical tensions have been increasing across the globe for the last few years. Several countries have been increasing their budgets to strengthen their defense capabilities. For instance, the U.S. is also asking NATO countries to increase military spending to 2% of their respective GDPs. Moreover, France declared that it would be increasing defense spending by 40% in the next six years from 2020. Thus, the requirement for enhanced battlefield performance is likely to fuel the development of GaN industrial devices in the near future.

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Regional Outlook of Global GaN Industrial Devices Market

In terms of volume, North America held a prominent share of 47.5% of the global GaN industrial devices market in 2021. The GaN industrial devices market in North America is expected to grow at a steady pace, due to extensive utilization of GaN on diamond-based transistors, wireless communication devices, and radar sensing equipment, power electronics devices, IT and telecommunication, and aerospace & defense industries in the region.

The Asia Pacific and Europe are also prominent consumers of GaN industrial devices, and the regions held 28.4% and 18.3% shares, respectively, of the global market in 2021. GaN technology research & development initiatives taken by researchers and manufacturers are also expected to further boost the GaN industrial devices market in Europe. For instance, the German research ministry and Saxon State Government have funded a new research laboratory to quickly industrialize the research result of the GaN-based device. In the Asia Pacific, China and India are keen to adopt GaN on diamond semiconductors devices in the next few years. Numerous advantages such as easy availability of raw materials, growing economy, and skilled workers are prompting several companies to shift their infrastructure and manufacturing units to the Asia Pacific.

Moreover, rapid technological advancements in developing economies and high investments in research and development in the region are fuelling the demand for GaN industrial devices to achieve cost-effectiveness and high performance for semiconductor devices.

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Analysis of Key Players in Global GaN Industrial Devices Market

Diversification of product portfolios and mergers and acquisitions are key strategies adopted by key players. Cree Inc., Freescale Semiconductors Incorporated, Fujitsu Limited, GaN Systems, Infineon Technologies AG, Nichia Corporation, NXP Semiconductors N.V., RF Micro Devices Inc., Texas Instruments Incorporated, and Toshiba Corporation are the prominent entities operating in the market.

Each of these players has been profiled in the GaN industrial devices market report based on parameters such as company overview, financial overview, business strategies, product portfolio, business segments, and recent developments.